| Call Number | 11226 |
|---|---|
| Day & Time Location |
T 4:10pm-6:40pm 633 Seeley W. Mudd Building |
| Points | 3 |
| Grading Mode | Standard |
| Approvals Required | None |
| Instructor | Yannis P Tsividis |
| Type | LECTURE |
| Method of Instruction | In-Person |
| Course Description | Operation and modeling of MOS transistors. MOS two- and three-terminal structures. The MOS transistor as a four-terminal device; general charge-sheet modeling; strong, moderate, and weak inversion models; short-and-narrow-channel effects; ion-implanted devices; scaling considerations in VLSI; charge modeling; large-signal transient and small-signal modeling for quasistatic and nonquasistatic operation. |
| Web Site | Vergil |
| Department | Electrical Engineering |
| Enrollment | 37 students (68 max) as of 7:06PM Thursday, October 30, 2025 |
| Subject | Electrical Engineering |
| Number | E6302 |
| Section | 001 |
| Division | School of Engineering and Applied Science: Graduate |
| Open To | Engineering:Undergraduate, Engineering:Graduate, GSAS |
| Section key | 20253ELEN6302E001 |